Optical sensor by infrared reflection

The CNY70 sensor is composed of an infrared emitting diode and a phototransistor. Allows detection of objects at close range.

Specifications:
Package type: with solder terminals
Detector type: photo transistor.
Dimensions: 7 x 7 x 6mm.
Maximum operating distance: 5mm.
Emitter wavelength: 950 nm.
Daylight filter
LED maximum current: 50 mA.
Phototransistor maximum current: 50 mA.
Operating temperature: -40°C ~ 85°C